Improved hot-carrier immunity in CMOS analog device with N/sub 2/O-nitrided gate oxides

The authors report on the hot-carrier effects on analog device performance parameters in CMOS devices with N/sub 2/O-nitrided gate oxides. The hot-carrier-induced degradation has been studied in terms of drain output resistance, voltage gain, differential offset voltage, and voltage swings. Results show that, N/sub 2/O nitridation significantly improves the hot-carrier immunity in these aspects, especially for n-channel MOSFETs. Analog and digital device performance degradations have been compared.<
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