Comparison of neutral electron trap generation by hot-carrier stress in n-MOSFET's with oxide and oxynitride gate dielectrics

A comparative study of neutral electron-trap generation due to hot-carrier stress in n-MOSFETs with pure oxide, NH/sub 3/-nitrided oxide (RTN), and reoxidized nitrided oxide (RTN/RTO) as gate dielectrics is reported. Results show that neutral electron trap generation is considerably suppressed by nitridation and reoxidation. The nature of neutral traps is described based on the kinetics of trap filling by electron injection into the gate dielectrics immediately after channel hot-electron stress (CHES). Improved endurance of the RTN and RTN/RTO oxides is explained using physical models related to interfacial strain relaxation.<
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