Optical waveguides formed in InGaAs/InP multi quantum wells by phosphorous implantation

Phosphorous implantation and subsequent annealing has been used to selectively disorder In/sub 0.53/Ga/sub 0.47/As/InP MQW material. Photoluminescence measurements have shown that band gap modification occurs during annealing and that this process is probably due to implantation disorder rather than diffusion of the phosphorous atom. These results also suggest that when the disorder level exceeds the amorphous threshold the mixing process is inhibited. The selective disordering method has been used to form stripe optical waveguides with propagation losses which increase with disorder level. The lowest propagation loss measured was 4.4 dB/cm.<
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