Disordering of long wavelength InGaAs/InGaAlAs multiple quantum wells using boron and fluorine

Both fluorine and boron produced a blue shift in the exciton energy. Fluorine gave the largest shifts, 45 meV, and appears to rapidly cause the total intermixing of the quantum wells. Boron produced only small shifts in the exciton peak. Annealing at temperatures greater than 650 degrees C caused the indium and gallium in the unimplanted material to interdiffuse producing a red shift in the exciton peak. Implantation with fluorine or boron causes the aluminium to diffuse and reverses this effect at these temperatures.<
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