An investigation of MOSFET statistical and temperature effects

Methodologies that make possible the prediction of MOSFET device performance variations occurring as a consequence of random statistical process perturbations and changes in operating temperature are presented. Measured parameter distributions and correlations combined with principal component analysis and gradient analysis techniques have been employed to facilitate the accurate prediction of device current and conductance performance distributions. Complete MOSFET parameter sets have also been measured and analyzed over a -50 degrees C to +120 degrees C temperature range. Simple expressions relating certain parameters to operating temperature are utilized to model these variations where appropriate.<
>