Capacitor insulator reliability prediction using three-dimensional test chips for submicron DRAMS

Proposes a new method to predict the reliability of capacitors in any three-dimensional structure under any stress conditions, using test chips which have independently controlled three-dimensional structures. This method is a very promising tool for developing high-reliability capacitor insulators on three-dimensional electrodes in submicron dynamic RAMs (DRAMs). This method can be used to quantitatively compare insulator characteristics.<
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