Measurement of group effective index in integrated semiconductor optical waveguides

The effective group index of InGaAsP/InP moderately diluted multiple quantum well (MQW) waveguides grown by metalorganic chemical vapor deposition (MOCVD/sur) on InP has been measured in the 1.55- mu m spectral region. The technique used is based on the Fourier analysis of the spectral transmission function of a resonant cavity formed by the waveguide itself. Accuracy to the third decimal place is demonstrated, and differences between TE and TM indexes are also evidenced.<
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