Developments in silicon opto-hybrid technology for high performance opto-electronic modules

To increase interconnection capabilities at all levels, new ways of packaging optical, optoelectronic and electronic components are vital. A possibility is to make use of hybrid multi-chip modules. Hybrid mounting techniques allow the independent optimisation of the individual optical and electronic components; InP lasers can be mixed with Si ICs and InGaAs photodetectors. In this way complex and densely packed integrated optoelectronic subsystems can be manufactured, which make the best use of each technology. Silicon possesses a unique combination of properties as a substrate for such opto-hybrid modules. Progress in the development of silicon-based opto-hybrids is described with reference to a particular application in the interconnection of multiprocessor mainframe computers: a wideband optical bus. In particular, the transmitter unit of such a module, capable of a data rate of up to 32 Gbit/s, is described. The use of hybrid techniques in this application is essential to achieve the total data rate required within an acceptable board area and power consumption.<
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