Design considerations for a multiple-quantum-well nonresonant surface-normal modulator

It is shown that by using optimal quantum-well thickness, and by using a symmetric back-to-back p-i-n structure, a non-Fabry-Perot surface-normal reflection modulator based on the quantum confined Stark effect in a GaAs/AlGaAs multiple-quantum-well (MQW) can provide intensity modulation with (a) at least 10-dB contrast ratio, (b) a drive voltage less than 10 V, and (c) an active-layer thickness less than 4 mu m. The drive voltage for a given contrast ratio can be minimized by using the quantum-well structure with the maximum Delta alpha /F.<
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