Comparison of I-V, CV, and chemical data for quality control studies of SiO/sub x/N/sub y/ films on Si

Capacitance-voltage (CV) and current-voltage (I-V) measurements for SiO/sub x/N/sub y/ films are compared with chemical data in order to provide some diagnostic capabilities in relating aberrant electrical characteristics with contaminants incorporated in the insulator film structure. In-process monitoring of film quality (utilizing electrical characteristics and chemical data) is especially critical in very large-scale integration (VLSI) processing control where the films are utilized both as an integral part of specific semiconductor device processing steps or as part of the semiconductor device structure.<
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