Experimental study of the electrical performance of isolation structures

The electrical behaviour of the parasitic Al-gate MOS transistor on LOCOS and SILO isolation structures is investigated. The influence of the two-dimensional parasitic channel on the isolation performances is pointed out by studying the bird's-beak length, the field oxide thickness, and the use of a semi- or fully recessed structure. The measured characteristics are discussed and explained with the assistance of the two-dimensional process simulations of the isolation structures.<
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