Roles of corners in matching of linear MOS capacitors

Statistically highly significant improvement in matching MOS capacitors has been observed for a cornerless structure in which photolithographically defined corners are avoided. For the considered dimensions and technology, the improvement in matching is by a factor of two. This amounts to an economy of the silicon area by a factor of four in switched-capacitor, A/D (analog-to-digital), and D/A converter applications.<
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