High speed dual modulus dividers using AlInAs-GaInAs HBT IC technology

4/5 and 8/9 dual-modulus prescalers are fabricated using AlInAs-GaInAs heterojunction bipolar transistors (HBTs) which operate at clock frequencies up to 9 GHz and which dissipate 700 mW and 900 mW, respectively. The transistor technology results in a cutoff frequency and maximum frequency of oscillation of 90 GHz and 70 GHz, respectively. The 4/5 and 8/9 dividers consists of 106 and 124 transistors, respectively. These are the largest circuits fabricated with HBTs on InP substrates and are among the fastest reported dual-modulus prescalers. The AlInAs-GaInAs HBT technology, circuit design, and measurement results are described.<
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