Simulation of the effect of energetic ion radiation on silicon

A set of programs under development to simulate the three-dimensional interaction of high energy ions with solid silicon is described. A classical trajectory Monte Carlo algorithm was used to model the initial ion strike to the target and the primary ionization of electrons produced in the target. The number of primary electrons, along with their position and momenta, were entered as input into a non-relativistic Monte Carlo electron transport code. Both elastic and inelastic scattering events were considered in the simulation of the secondary electron cascade. Inelastic collisions include ionization of all shells. A prediction is made of the quantity and radius of the plume of space charge generated within the semiconductor material due to the cosmic ray ion strike.<
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