0.2 mu m gate pseudomorphic inverted HEMT for high speed digital ICs

A 0.2 mu m gate pseudomorphic inverted HEMT (high electron mobility transistor) has been developed for high-speed digital ICs. The fabricated pseudomorphic inverted HEMTs demonstrate a transconductance of 580 mS/mm and a cutoff frequency of 100 GHz. The shortest propagation delay in DCFL ring oscillator is 6.6 ps/gate with a power dissipation of 1.8 mW/gate. Using the pseudomorphic inverted HEMTs, a 1/8 static frequency divider IC and a 2:1 multiplexer IC are fabricated. The basic logic gate is E/D type DCFL. The static frequency divider IC operates up to 25 GHz. The 2:1 multiplexer IC generates a 20 Gb/s data stream from 10 Gb/s data streams.<
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