Defect Annealing of InAs–InAlGaAs Quantum-Dash-in-Asymmetric-Well Laser

We report the improvement of ~1.62-mum wavelength InAs-InAlGaAs quantum-dash-in-asymmetric-well laser performance using rapid thermal annealing. After the postgrowth annealing at 700 degC for 2 min, the internal quantum efficiency is increased from 90% to 93%, and the linewidth of the laser spectrum and the threshold current density is significantly reduced