Physics and Characterization of Various Hot-Carrier Degradation Modes in LDMOS by Using a Three-Region Charge-Pumping Technique

Degradation of lateral diffused MOS transistors in various hot-carrier stress modes is investigated. A novel three-region charge-pumping technique is proposed to characterize interface trap
$(N_ it)$
and bulk oxide charge
$Q_ ox$
creation in the channel and in the drift regions separately. The growth rates of
$N_ it$
and
$Q_ ox$
are extracted from the proposed method. A two-dimensional numerical device simulation is performed to gain insight into device degradation characteristics in different stress conditions. This paper shows that a maximum
$I_g$
stress causes the largest drain current and subthreshold slope degradation because of both
$N_ it$
generation in the channel and
$Q_ ox$
creation in the bird's beak region. The impact of oxide trap property and location on device electrical characteristics is analyzed from measurement and simulation.