Ge Deep Sub-Micron HiK/MG pFET with Superior Drive Compared to Si HiK/MG State-of-the-Art Reference

This paper presents results on conventional, deep sub-micron short-channel Ge p-and nFET devices with a HiK/MG gate stack and NiGe source/drain regions. It is shown that the mobility enhancement observed in long channel Ge pFETs as compared to Si pFETs, can indeed result in deep sub-micron Ge devices with a higher drive