Ge/SiGe Quantum Confined Stark Effect Modulators on Silicon

We have demonstrated efficient QCSE in silicon-based structures, using strained Ge MQWs. The behavior of the exciton peaks, the band edge shift and the shift in absorption coefficient are comparable to those observed in III-V materials at similar wavelengths. Our materials and fabrication processes are completely CMOS compatible and suitable for mass production. This approach is therefore very promising for silicon-based electro-absorption modulators operating at high speed, low power, and low operating voltage and with small device areas