700-V 1.0-$hboxmOmega cdot hboxcm^2$Buried Gate SiC-SIT (SiC-BGSIT)

Ultralow on-resistance silicon carbide static induction transistors with buried gate structures (SiC-BGSITs) have been successfully developed through innovative fabrication process. A submicrometer buried p
⁺
gate structure was fabricated by the combination of submicrometer trench dry etching and epitaxial growth on a trench structure. The breakdown voltage V
_BR
and specific on-resistance R
_onS
of the fabricated SiC-BGSIT were 700 V at a gate voltage V
_G
=-12V, and 1.0 mOmegamiddotcm
²
at a current density J
_D
=200A/cm
²
and V
_G
=2.5V, respectively. This R
_onS
is the lowest on-resistance for ~600 V class power switching devices, including other SiC devices and GaN HEMTs