Tunnett diode oscillators for mm-wave wideband communication and for terahertz electronics

70-706 GHz GaAs TUNNETTs, transit time diodes with tunneling injection of electrons were fabricated with molecular layer epitaxy. Their low noise makes them suitable for mm-wave and sub-mm-wave communication systems as generators or self-oscillating modulators. CW THz-wave TUNNETTs are compact and power-efficient as compared with other THz generators