InP-Based Transverse Junction Light-Emitting Diodes for White-Light Generation at Infrared Wavelengths

We demonstrate a novel white-light light-emitting-diode (LED) structure that operates at infrared wavelengths for broadening optical bandwidth performance. The nonuniform carrier distribution problem that occurs in the multiple quantum wells (MQWs) of traditional vertical p-n junction LEDs can be totally eliminated by incorporating a transverse p-n junction with MQWs which have different center wavelengths. The wide optical 3-dB bandwidth achieved (~550 nm) is very stable and varies only negligibly with the bias current. For a bias current of 60 mA, a tremendously wide 3-dB optical bandwidth (580 nm, 1042 ~ 1622nm) has been demonstrated