The origin of the temperature dependence in resonant tunneling transport

The temperature dependence of transport in resonant tunneling devices is studied theoretically and compared with experiments. The most contributions come from the one-dimensional carrier energy distribution factor, the position of the Fermi energy, and the temperature dependences of some physical parameters such as Fermi energy, effective mass, and carrier mobility. When these physical factors are considered, the experimental results, including both increasing and decreasing peak current with temperature, can be explained in a coherent way.<>