Effects of helium dilution on glow discharge depositions of a-Si/sub 1-x/Ge/sub x/:H alloys

A study is made of the effects of helium feed gas dilution on the properties of a-Si/sub 1-x/Ge/sub x/:H alloys deposited using radio-frequency glow discharge decomposition of silane and germane gas mixtures. Comparing a-Si/sub 1-x/Ge/sub x/:H films deposited using 65% helium dilution with films deposited using 65% hydrogen dilution, it is found that films deposited with helium dilution have a longer charge carrier diffusion length and higher quantum efficiency-mobility-lifetime product values. It is also found that the incorporation of Ge atoms in the a-Si/sub 1-x/Ge/sub x/:H film is more efficient with helium dilution than with hydrogen dilution.<
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