Influence of the dislocation density on the performance of heteroepitaxial indium phosphide solar cells

Calculations are made to study the dependence of heteroepitaxial InP solar cell efficiency on dislocation density. Effects of surface recombination velocity and cell emitter thickness have been considered. Calculated results are compared with the available experimental results on representative InP solar cells. It is shown that heteroepitaxial InP cells with over 20% AM0 efficiency could be fabricated if dislocations are reduced to <10/sup 5/ cm/sup -2/.<
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