0.25- mu m pseudomorphic HEMTs processed with damage-free dry-etch gate-recess technology

Damage-free, dry-etched 0.25- mu m T-shape gate pseudomorphic InGaAs channel HEMTs have been demonstrated. A Freon-12-based discharge was used in either electron cyclotron resonance (ECR) or reactive ion etching (RIE) systems to perform the gate recess process. Etching selectivity of more than 200 was obtained between the GaAs cap layer and the underlying AlGaAs donor layer. Self-bias voltages of -30 to -50 V were used in the etching process to minimize the damage. Pre- and post-etch clean steps were utilized to achieve uniform etch and removal of any dry-etch-related residues. Schottky diodes fabricated on n-GaAs subjected to either dry or wet etching showed no differences of barrier height, zero-bias depletion depth, and ideality factor. By using the dry etch for gate recess, very tight threshold voltage uniformity was obtained. The devices showed I-V characteristics comparable to that of devices fabricated with a wet chemical process.<
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