UHV/CVD growth of Si and Si:Ge alloys: chemistry, physics, and device applications

The fundamental chemical principles underlying ultra-high-vacuum chemical vapor deposition (UHV CVD) are described in this overview. A variety of unique devices and structures, e.g. high-speed graded-bandgap heterojunction bipolar transistors and n-type resonant tunneling diodes, are discussed. The role of fundamental interface chemistry in making such structures possible is considered.<
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