HfSiON n-MOSFETs Using Low-Work Function$hboxHfSi_x$Gate

The authors have developed a novel high-temperature stable
$hboxHfSi_x$
gate for high-
$kappa$
HfSiON gate dielectric. After a 1000
$^circhboxC$
RTA, the
$hboxHfSi_x/hboxHfSiON$
devices showed an effective work function of 4.27 eV and a peak electron mobility of 216
$hboxcm^2/hboxVcdothboxs$
at 1.6-nm equivalent oxide thickness, with additional merit of a process compatible with current very large scale integration fabrication lines.