Double-Stacked EBG Structure for Wideband Suppression of Simultaneous Switching Noise in LTCC-Based SiP Applications

We propose a novel electromagnetic bandgap (EBG) structure with a significantly extended noise isolation bandwidth, called a double-stacked EBG (DS-EBG) structure, fabricated on a low-temperature co-fired ceramic (LTCC) multilayer substrate. The DS-EBG structure was devised for wideband suppression of simultaneous switching noise (SSN) coupling in system-in-package (SiP) applications. Our design approach was enabled by combining two EBG layers embedded between the power and ground planes. The two EBG layers had different bandgaps from using different cell sizes. Enhanced wideband suppression of the SSN coupling was validated using a 11.4-GHz noise stop bandwidth with 30-dB isolation in time and frequency domain measurements up to 20GHz.