MOSTSM: a physically based charge conservative MOSFET model

Charge-conservative CV models for the MOSFET can be classified into two categories: a depletion charge model, which is accurate but complex, and a simplified charge model, which is less accurate but is very simple. The accuracy of the latter model is investigated. The model error of C/sub BD/ and C/sub BS/ is found to be between 10 and 26 percent even in a long-channel MOSFET. The model of the bulk charge Q/sub B/ causes this error. A simple but accurate model for C/sub BD/ and C/sub BS/ is found, and a model named MOSTSM is developed. The model accuracy for a 0.8- mu m nMOSFET is investigated. CV model error is found to be less than 10%. This model has been implemented in a circuit simulator.<
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