Numerical Simulation of Metal Plasma Immersion Ion Implantation and Deposition on a Dielectric Wedge

Plasma immersion ion implantation (PIII) of a dielectric object is not straightforward to simulate because the surface will be charged during the process. The one-dimensional analytic equation developed by Emmert [J. Vac. Sci. Technol. B Microelectron. Process. Phenom., vol. 12, pp. 880, 1994] cannot be applied to a two-three-dimensional dielectric object. In this paper, the author develops a numerical model that can handle the surface charging effect of a complex dielectric object. The model is used to simulate the metal PIII and deposition of a dielectric wedge. The potential of the internal volume of the wedge is solved by Laplace's equation, the boundary between the wedge and metal plasma is handled by Gauss' law, and the bulk metal plasma region is simulated by the hybrid model of particle-in-cell ions and Boltzmann distribution of electrons. It shows that the equilibrium steady-state ion sheath formed by the sample stage biased at -8 kV is modified by the thinner dielectric wedge with the height of 0.03 m. The tip of the dielectric wedge is touched by the main stream of the metal plasma