Simulating Enhanced Diffusion and Activation of Boron by Atomistic Model

The kinetic Monte Carlo (KMC) method has been the applicable method for the investigation on annealing process. In this paper, the simulation on both enhanced diffusion and inactivation of B is presented. The inactivation and clustering of B implanted at 0.5 keV and annealed at 900degC~1200degC are correctly simulated. The model can also correctly simulate the enhanced diffusion of B introduced by ultra-low energy implantation or pre-doping. Analysis on the evolution of B-Si clusters in annealing is performed