Precision Implant Requirements for SDE Junction Formation in sub-65 nm CMOS Devices

Sub-65 nm devices are becoming increasingly sensitive to variations of ion beam angular properties. Beam divergence and beam steering effects in Source/Drain Extension (SDE) implants could significantly shift device characteristics. In this paper we review the implant precision requirements for Source/Drain Extension (SDE) formation for sub-65nm node devices. TCAD simulation was used to analyze the effects of beam emittance and steering errors for an on-axis (0°) SDE implant. In addition, the effect of energy contamination introduced along with decelerated low energy ions is also discussed. Response of device electrical characteristics to variation of beam angle properties is quantified and beam angle control requirements for state-of-the-art ultra-low energy implanters formulated.