Nanoscale Si-based 3-dimensional MOSFETs

We introduce nanoscale CMOS transistors based on silicon technology to overcome the scaling limits such as area, physics, lithography, etc. For the scaling of planar transistors down to 50 nm, RCAT, PiFET, and Twin SONOS Memory cell transistors are developed. As the further scaling is required below 50 nm, 3 dimensional transistors such as FinFET, McFET, MBCFET, and TSNWFET are newly developed to overcome the physical scaling limits down to 10nm with manufacturability and reliability.