A New Stored-Charge-Controlled Over-Voltage Protection Concept for Wide RBSOA in High-Voltage Trench-IEGTs

It is important to develop overshoot protection at turn-off transient for high-voltage IGBTs/IEGTs. The purpose of this paper is to propose a new stored-charge-controlled concept (SCC-concept) using a local lifetime reduction method with suitable p-emitter concentration to realize over-voltage self-protection without sacrificing of low saturation voltage characteristic of trench-IEGTs. A device design concept supported by device simulation is introduced. Experimental measurements indicate that an ideal voltage overshoot self-protection has been successfully developed