A Novel Diode Structure with Controlled Injection of Backside Holes (CIBH)

In this paper we present a novel 3.3kV diode structure with controlled injection of backside holes, i.e. CIBH diode. This new diode structure features buried floating p layers at the cathode side. These p doped areas prevent the formation of high electric field strength at the nn
⁺
junction and accordingly avoid the avalanche generation at the nn
⁺
junction. The CIBH diode concept provides, compared to diodes without p layers and the same design, significantly improved dynamic ruggedness and improved soft reverse recovery at low current densities. Simulations and results of the first fabricated diodes show the realizability of this new promising diode concept.