Theoretical Investigation of Silicon Limit Characteristics of IGBT

IGBTs have evolved rapidly as key power devices for high power application. The present paper theoretically investigates, for the first time, the silicon limit of IGBTs, and proposes a new trench gate IEGT/IGBT, realizing the theoretical limit. It is shown that almost one order of magnitude improvement in on-resistance will be expected. The author also proposes, for the first time, a theory to achieve extremely large short-circuit withstanding capability