Correlating drain-current with strain-induced mobility in nanoscale strained CMOSFETs

The correlation between channel mobility gain (Deltamu), linear drain-current gain (DeltaI
_dlin
), and saturation drain-current gain (DeltaIdsat) of nanoscale strained CMOSFETs are reported. From the plots of DeltaI
_dlin
versus DeltaI
_dsat
and ballistic efficiency (Bsat,PSS), the ratio of source/drain parasitic resistance (R
_SD,PSS
) to channel resistance (R
_CH,PSS
) of strained CMOSFETs can be extracted. By plotting Deltamu versus DeltaI
_dlin
, the efficiency of Deltamu translated to DeltaI
_dlin
is higher for strained pMOSFETs than strained nMOSFETs due to smaller RSD,PSS-to-RCH,PSS ratio of strained pMOSFETs. It suggests that to exploit strain benefits fully, the RSD,PSS reduction for strained nMOSFETs is vital, while for strained pMOSFETs the DeltaI
_dlin
-to-Deltamu sensitivity is maintained until R
_SD,PSS
becomes comparable to/or higher than R
_CH,PSS