Low-power full-band UWB active pulse shaping circuit using 0.18-/spl mu/m CMOS technology

A low-power active pulse shaping circuit for ultra wide-band (UWB) dual-band transmitter is presented. The circuit is fully integrated in 0.18-/spl mu/m CMOS technology and only consumes a total power of 10.8mW from a supply voltage of 1.8V. The circuit is composed of a passive part shaping the pulse and an active part providing gain over the whole UWB frequency range (3.1 to 10.6 GHz) to fit the transmitted pulse to the Federal Communications Commission (FCC) mask. This output stage circuit provides a gain of 7 to 8dB across the band of interest.