RF components with high reliability and low loss by partial trench isolation of SOI-CMOS technology

This paper describes the experimental characteristics of RF components with layout and structural optimization, fabricated in 0.10-mum 1.2-V SOI-CMOS technology with partial trench isolation (PTI). ESD protection-grounded gate SOI-NMOSFETs achieve high reliability due to body-tied structure with PTI, and newly proposed ESD diodes also derive superior performance. Moreover, this technology offers a low loss RF switch and a broadband amplifier with low power consumption. These results are very promising for the fabrication of broadband RF integrated circuits