Measurement and modeling errors in noise parameters of scaled-CMOS devices

Noise parameter measurements of submicrometer scaled-CMOS devices are error prone. These errors can propagate to a device model affecting the performance of low-noise amplifiers (LNAs) designed with them. In this paper, measurement errors in noise parameters of submicrometer scaled-CMOS devices are quantified. The sensitivity of different noise parameters to measurement and modeling errors is examined, showing that some parameters (NF
_min
,R
_n
) are more immune to such errors than others (G
_opt
,B
_opt
). We propose a modeling and design approach (desensitization by R
_n
-optimization) that can greatly alleviate the impact of such errors on the noise figure of LNAs. Measured results from a 90-nm LNA show substantial (ges 2.5 dB) improvement in its noise figure as a result of desensitization