Preparation of Pb(Zr,Ti)O/sub 3/ ferroelectric thin films by a pulsed laser ablation technique

Ferroelectric thin films of Pb(Zr,Ti)O/sub 3/ have been fabricated on polished silicon wafers by a pulsed laser ablation technique at substrate temperature of 100-200 degrees C. The ferroelectric properties of the thin films can be greatly improved by a post-deposition laser annealing. Some factors which affect the quality of thin films were investigated. The structures of thin films were analyzed by X-ray diffraction. The Curie temperature and hysteresis loops of PZT ferroelectric thin films were measured.<
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