Room temperature CW operation of Ga/sub 0.3/In/sub 0.7/As/GaInAsP/InP strained MQW lasers with wire active region

A room temperature CW operation of Ga/sub 0.3/In/sub 0.7/As/GaInAsP/InP GRINSCH compressive strained MQW lasers with 30 approximately 60 nm wide wire active region was achieved. This device was fabricated by two-step LP-OMVPE growths on p-type InP substrate and wet chemical etching. Threshold current as low as 53 mA (L=910 mu m, J/sub th/=2.9 kA/cm/sup 2/) was obtained at RT-CW condition. The spontaneous emission peak and the lasing wavelength of strained MQW wire lasers exhibited approximately 20-meV blue shift from those of MQW film lasers cut out from the same wafer.<
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