Characteristics of short-wavelength (617< lambda <640 nm) Ga/sub 0.4/In/sub 0.6/P/(Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P strained, thin multiple-quantum-well lasers

The authors examine the operating characteristics of short wavelength (617< lambda <640 nm) AlGaInP lasers containing three thin ( approximately 20 AA) compressively strained Ga/sub 0.4/In/sub 0.6/P/(Al/sub 0.6/Ga/sub 0.4/)/sub 0.5/In/sub 0.5/P quantum wells and Al/sub 0.5/In/sub 0.5/P cladding layers, grown by low pressure organometallic vapor phase epitaxy. At room temperature, wavelengths as short as 617 nm have been achieved, with pulsed threshold current density of 2.5 kA/cm/sup 2/. As a result of greater electron confinement at longer wavelengths, the threshold, and its temperature sensitivity, are improved.<
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