A monolithic integrated 180 GHz SiGe HBT push-push oscillator

A fully integrated single-ended output push-push oscillator is realized using an advanced 0.2 /spl mu/m SiGe HBT process. Up to -5 dBm output power is achieved at 180 GHz using a technology with a transition frequency f/sub T/ of 200 GHz and maximum oscillation frequency f/sub MAX/ of 275 GHz. Preliminary phase noise measurements show a phase noise of less than -90 dBc/Hz at 1 MHz offset from the 180 GHz carrier.