Investigation of MOS-NDR Voltage Controlled Ring Oscillator Fabricated by CMOS Process

A voltage-controlled ring oscillator (VCO) based on novel MOS-NDR circuit is described. This MOS-NDR circuit is made of metal-oxide-semiconductor emiconductor ield-effect-transistor ( MOS) devices that can exhibit the negative differential resistance (NDR) current-voltage characteristic by suitably arranging the MOS parameters. The VCO is constructed by three low-power ower MOS-NDR inverters. This novel VCO has a range of operation frequency from 38MHz to 162MHz. It consumes 24mW in its central frequency of 118MHz using a 2V power supply. This VCO is fabricated by 0.35μm CMOS process and occupy an area of 0.015 mm
²
.