Novel ultra-low power RF Lateral BJT on SOI-CMOS compatible substrate

This work presents a novel ultra-low power RF LBJT on SOI. The fabrication process relies on polysilicon side-wall-spacer (PSWS) to self-aligned the base contact to the intrinsic base in the 100 nm range. The fabricated LBJTs exhibits superior Johnson's product (f
τ
x BV
CEO
) in the range between 190-300 GHz.V. The f
max
of the optimal device reaches 46 GHz at collector current density of only 0.15 m/μm
²
. Both figure-of-merit are in-line with advanced SiGe-HBT device, and superior than previously published data on lateral BJTs. This LBJT is built on SOI-CMOS compatible substrate, and is an ideal candidate for SOI-BiCMOS integration for RF and mixed-signal SoC.