Room-temperature operation of MOCVD-grown GaInAs/InP strained-layer multiquantum-well lasers in the 1.8- mu m range

The authors report the first successful room-temperature pulsed operation of InGaAs strained-layer multiquantum-well (SL-MQW) injection lasers grown by MOVPE (metal-organic vapor-phase epitaxy) on InP substrates in the 1.8- mu m range. The threshold current density and external differential quantum efficiency of 10- mu m-wide ridge waveguide lasers were 2.5 kA/cm/sup 2/ and 5% for 1-mm and 400- mu m-long cavities, respectively. The laser structure consists of four 35-AA-wide In/sub 0.75/Ga/sub 0.25/As SL-QWs separated by 65-AA-wide barrier layers of lattice-matched InGaAs. The MQW is further sandwiched between 150 nm of InGaAsP ( lambda =1.3 mu m) and 2 mu m of InP on both sides.