Investigation of RF Performance of Nano-Scale Ultra-Thin-Body Schottky-Barrier MOSFETs Using Monte Carlo Simulation

A Monte Carlo investigation of the dynamic performance of nano-scale ultra-thin-body (UTB) Schottky-Barrier MOSFETs (SB-MOSFETs) is presented. A thorough account of how the gate voltage and SB barrier height affect the RF performance of UTB SB-MOSFETs is elaborated. The UTB SB-MOSFET offers excellent RF performance with high values of f
T
and f
max
. The peak f
T
is higher than 600 GHz with SB height ranging from 0.2eV to 0.3eV. It is found that gate voltage has a significant influence on f
T
and f
max
of UTB SB-MOSFETs whereas the barrier height is of minor importance. However, both gate voltage and SB height affect the g
m
and g
ds
obviously. For high performance of UTB SB-MOSFETs, appropriate gate voltage and SB height is of great importance.