Design of a silicon magnetodiodes array with self-compensation for temperature drift

The paper describes the design of a silicon magnetodiodes array with self-compensation for temperature drift, which is used for perpendicular-plane magnetic field sensing. Individual sensor cells comprise a pair of silicon magnetodiodes with differential structure. The magnetodiodes array can be fabricated on the surface of high-resistivity silicon on insulator (SOI) with the combination of IC process and micro-electro-mechanical system (MEMS) techniques, the proposed fabrication process is provided.